四电弧提拉法单晶炉

四电弧提拉法单晶炉


日本Techno Search Corp.公司生产的四电弧提拉法单晶生长炉(型号:TCA4-6),采用电弧放电的高温材料合成方法,非常适合生长化学性质活跃但熔点高的金属间化合物,包括含有稀土元素(或者金属铀等)的多元金属间化合物,例如UGe2, UPt3, V3Si, URu2Si2, RE2Co17 , CePd2Al3, REFe10Ti2 合金单晶以及Nd2Fe14B, URhAl, UNiAl and RENi5等合金单晶。生长过程中,原料放在旋转的铜坩埚中,四个电极同时放电形成高温从而熔化原料,通过精密控制的拉晶装置使用Czochralski方法将熔化的原料拉成单晶。样品室的真空度可达10-6托,并充入惰性气体氩气。


采用电弧作为加热源,适用于各种金属、合金磁性材料单晶生长

产品特点:


*  采用四电弧法加热

*  可实现2000~3000°C高温

*  适用于金属间化合物材料


基本参数:


样品腔:

可实现高温:2000~3000°C*

气氛:Ar

腔室压强范围:10-4 Pa~1Atm

材料:不锈钢

冷却:水冷


提拉杆:

提拉生长速度:3-38mm/hr

转动速度:1-15rpm

行程:150mm


电弧电流:

可持续工作电流可高达:75A(可调) 

短时间工作电流可高达:150A(可调) 

晶体生长电极数量:4个

吸气电极数量:1个


坩埚:

转动速度:1-10rpm

行程:40mm(手动控制)

*温度取决于工艺条件和材料


工作原理图


真空系统


摄像头实时观察晶体生长状态


参考文献:Physical Society of Japan 93, 124709 (2024). https://doi.org/10.7566/JPSJ.93.124709


参考文献:PHYSICAL REVIEW B 102, 115158 (2020). DOI: 10.1103/PhysRevB.102.115158


基于日本Techno Search四电弧单晶炉获得的PrSi单晶测试数据。参考文献:P. Shee,T. Halder, C.-J. Yang, et al. “The Interplay of Magnetic Order with the Electronic Scattering and Crystal-Field Effects in a Metallic Ferromagnet.”Advanced Science (2025): e17704. https://doi.org/10.1002/advs.202517704


[1]“The Interplay of Magnetic Order with the Electronic Scattering and Crystal-Field Effects in a Metallic Ferromagnet.”P. Shee, T. Halder, C.-J. Yang, et al. Advanced Science (2025): e17704. https://doi.org/10.1002/advs.202517704


[2]Structural Evolution from Hyper-Honeycomb to Honeycomb Networks and Superconductivity in LaPtxSi2−x. Sitaram Ramakrishnan, Tatsuya Yamakawa, Ryohei Oishi, Soichiro Yamane, Atsutoshi Ikeda, Masaki Kado, Yasuyuki Shimura, Toshiro Takabatake, Takahiro Onimaru, Yasuhiro Shibata, Arumugam Thamizhavel, Srinivasan Ramakrishnan, Shingo Yonezawa, Minoru Nohara. Journal of the Physical Society of Japan, 93, 124709 (2024). Doi.org/10.7566/JPSJ.93.124709

 

[3]Extremely large magnetoresistance, anisotropic Hall effect, and Fermi surface topology in single-crystalline WSi2.Rajib Mondal,Souvik Sasmal,Ruta Kulkarni, Arvind Maurya, Ai Nakamura, Dai Aoki, Hisatomo Harima and Arumugam Thamizhavel. PHYSICAL REVIEW B 102, 115158 (2020). DOI: 10.1103/PhysRevB.102.115158

 

[4]Valence fluctuation in Ce2Re3Si5 and Ising-type magnetic ordering in Pr2Re3Si5 single crystals. Suman Sanki,Vikash Sharma,Souvik Sasmal,Vikas Saini,Gourav Dwari,Bishal Baran Maity,Ruta Kulkarni,Ram Prakash Pandeya,Rajib Mondalet al. Phys. Rev. B 105, 165134. DOI: https://doi.org/10.1103/PhysRevB.105.165134

 

[5]Complex magnetic behavior in Ho2Re3Si5 single crystal. Vikash Sharma,Shovan Dan,Suman Nandi,Gourav Dwari,Bishal Baran Maity,Suman Sanki,Ruta Kulkarni, and A. Thamizhavel. Phys. Rev. Materials 6, 124406. DOI: https://doi.org/10.1103/PhysRevMaterials.6.124406

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Ganjiang Innovation Academy,Chinese Academy of Sciences

University of St Andrews

Tokyo University

RIKEN Institute

Institute of Science Tokyo

Osaka University

Hokkaido University

Shizuoka University

Okayama University

Hiroshima University

Shimane University

Shinshu University

Tohoku University

Japan Atomic Energy Research Institute

University of California San Diego

Lawrence Livermore National Laboratory

University of Maryland